SK siltron

300mm Epitaxial Wafer

Manufacturing Process

  1. Poly Silicon Stacking
    1 POLY SILICON
    STACKING
    Process of filling high purity poly-crystal silicon in quartz crucible
  2. INGOT Growing
    2 INGOT
    GROWING
    Process where poly-crystal silicon is melted in high temperature then grown into single crystal ingot
  3. INGOT Grinding & Cropping
    3 INGOT GRINDING
    & CROPPING
    Process of making the surface of ingot smooth then cropping into blocks
  4. Wire Sawing
    4 WIRE
    SAWING
    Process of cutting the ingot block into single wafers
  5. Edge Grinding
    5 EDGE
    GRINDING
    Process of shaping the edge of the wafer
  6. Lapping
    6 LAPPING
    Process of making the surface of the wafer smooth and flat
  7. Etching
    7 ETCHING
    Process of eliminating process damages on wafer surface using chemical reaction
  8. Double Side Grinding
    8 DOUBLE
    SIDE GRINDING
    Process of removing small bumps on the wafer surface
  9. Polishing
    9 POLISHING
    Process of removing fine bumps on the wafer through precision processing
  10. Cleaning
    10 CLEANING
    Process of eliminating impurities on the wafer surface
  11. Inspection
    11 INSPECTION
    Process of inspecting the quality of wafer such as shape and flatness
  12. Particle Counting
    12 PARTICLE
    COUNTING
    Process of inspecting defects in wafer surface
  13. EPI Growing
    13 EPITAXIAL
    GROWING
    Process of adding silicon single crystal layer on wafers
  14. Packing
    14 PACKING
    Process of packaging the product to protect it from shock, dust and humidity