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An MOS process in which MOS transistors are formed by bridging two adjacent N-type diffusions (source and drain) with a dielectric (gate). When the source and the substrate are grounded and a positive voltage is applied to the gate, a conductive sheet of negative charge (N-channel) is created in the surface of the substrate under the dielectric.
Non-destructive bond pull
Pull stressing of all wires on all devices or a sample of devices from a given lot to a pull force which is lower than the minimum pull force limit imposed for destructive bond pull.
Non-standard part
A device procured to a contractor prepared specification rather than to a government prepared specification.
Refer to the flat top of an as grown crystal, or seed end ; the end that was the first part of the crystal formed, and usually has the lowest resistively.
A "u" shaped identification that is cut into the wafer to identify the molecular orientation of the wafer. Serves the same purpose as a "flat."
NPN transistor
A junction transistor constructed by placing a P-type base between an N-type emitter and an N-type collector. The emitter is normally negative with respect to the base and the collector is normally positive with respect to the base.
Semiconductor material in which the majority carriers are electrons and are therefore negative.
The repeating step in which a catalytic material, often a palladium or gold compound, is absorbed on a surface to act as sites for initial stages of deposition.
Auger process
the radiationless relaxation of an atom involving a vacancy in an inner electron shell. An electron is emitted, which is referred to as an Auger electron.
A detailed definition of a device's electrical and mechanical configuration, assembly, processing and testing used as a base from which to track subsequent changes
Oxygen (O2)
A colorless, odorless, nontoxic, and oxidizing gas that supports combustion. Oxygen is used in the chemical vapor deposition of silicon dioxide, as a source for oxidation, as a reactant to produce high purity water, and in plasma etching and stripping.
A region of surface conduction opposite in type from that expected from the bulk doping. Channels are sometimes introduced unintentionally by surface ionic contamination. The type of channel (P or N) will be determined by the type of majority carrier introduced into the channel.
Helium leak rate
The rate of helium leakage into or out of gas system, component, fitting, or vessel. The helium leak rate is expressed in standard cubic centimeters per second